- 专利标题： Semiconductor device and method for fabricating the same
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申请号： US14824057申请日： 2015-08-11
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公开(公告)号： US09793356B2公开(公告)日： 2017-10-17
- 发明人: Jeong-Ho Yoo , Byeong-Chan Lee , Hyun-Ho Noh , Yong-Kook Park , Bon-Young Koo , Jin-Yeong Joe
- 申请人： Jeong-Ho Yoo , Byeong-Chan Lee , Hyun-Ho Noh , Yong-Kook Park , Bon-Young Koo , Jin-Yeong Joe
- 申请人地址： KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 代理机构： Muir Patent Law, PLLC
- 优先权： KR10-2014-0121093 20140912; KR10-2015-0093415 20150630
- 主分类号： H01L29/16
- IPC分类号： H01L29/16 ; H01L29/78 ; H01L21/8238 ; H01L21/84 ; H01L29/66 ; H01L27/092 ; H01L27/12
摘要：
A semiconductor device may have a structure that prevents or reduces an etching amount of certain portions, such as a part of a source/drain region. Adjacent active fins may be merged with a blocking layer extending between adjacent the source/drain region. The blocking layer may be of a material that is relatively high-resistant to the etchant.
公开/授权文献
- US20160079367A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日：2016-03-17
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