Invention Grant
- Patent Title: Manufacturing method of semiconductor device
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Application No.: US15063883Application Date: 2016-03-08
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Publication No.: US09793383B2Publication Date: 2017-10-17
- Inventor: Kosei Noda , Toshinari Sasaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2010-181832 20100816
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/10 ; H01L29/04 ; H01L29/66 ; H01L29/49 ; H01L29/786 ; H01L21/477 ; H01L21/02 ; H01L21/465 ; H01L21/66 ; H01L29/40
Abstract:
A transistor with superior electric characteristics is manufactured. An oxide insulating film is formed over a substrate, an oxide semiconductor film is formed over the oxide insulating film, heat treatment is then conducted at a temperature at which hydrogen contained in the oxide semiconductor film is desorbed and part of oxygen contained in the oxide insulating film is desorbed, then the heated oxide semiconductor film is etched into a predetermined shape to form an island-shaped oxide semiconductor film, a pair of electrodes is formed over the island-shaped oxide semiconductor film, a gate insulating film is formed over the pair of electrodes and the island-shaped oxide semiconductor film, and a gate electrode is formed over the gate insulating film.
Public/Granted literature
- US20160190291A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2016-06-30
Information query
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