- 专利标题: Semiconductor laser device
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申请号: US14903466申请日: 2014-07-02
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公开(公告)号: US09793681B2公开(公告)日: 2017-10-17
- 发明人: Yuu Takiguchi , Yoshiro Nomoto
- 申请人: HAMAMATSU PHOTONICS K.K.
- 申请人地址: JP Hamamatsu-shi, Shizuoka
- 专利权人: HAMAMATSU PHOTONICS K.K.
- 当前专利权人: HAMAMATSU PHOTONICS K.K.
- 当前专利权人地址: JP Hamamatsu-shi, Shizuoka
- 代理机构: Drinker Biddle & Reath LLP
- 优先权: JP2013-147904 20130716
- 国际申请: PCT/JP2014/067712 WO 20140702
- 国际公布: WO2015/008627 WO 20150122
- 主分类号: H01S5/026
- IPC分类号: H01S5/026 ; H01S5/12 ; H01S5/187 ; G02F1/137 ; G02F1/1335 ; G02F1/29 ; H01S5/00 ; H01S5/343
摘要:
This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM which is optically connected to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, and a diffraction grating layer 6 which is optically connected to the active layer 4. The spatial light modulator SLM includes a common electrode 25, a plurality of pixel electrodes 21, and a liquid crystal layer LC arranged between the common electrode 25 and the pixel electrodes 21. A laser beam output in a thickness direction of the diffraction grating layer 6 is modulated and reflected by the spatial light modulator SLM and is output to the outside.
公开/授权文献
- US20160380405A1 SEMICONDUCTOR LASER DEVICE 公开/授权日:2016-12-29
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