Invention Grant
- Patent Title: RF amplification device with power protection during high supply voltage conditions
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Application No.: US14478822Application Date: 2014-09-05
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Publication No.: US09793860B2Publication Date: 2017-10-17
- Inventor: David Q. Ngo , Michael B. Thomas , Praveen Varma Nadimpalli
- Applicant: RF Micro Devices, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F3/19 ; H03F3/21 ; H03G3/20

Abstract:
Radio frequency (RF) amplification devices are disclosed along with methods of providing power to an RF signal. In one embodiment, an RF amplification device includes an RF amplification circuit and a voltage regulation circuit. The RF amplification circuit includes a plurality of RF amplifier stages coupled in cascade. The voltage regulation circuit is coupled to provide a regulated voltage to a driver RF amplifier stage. The voltage regulation circuit is configured to generate the regulated voltage so that the maximum output power of the RF amplification circuit is provided approximately at a first power level while the supply voltage is above a threshold voltage level. The first power level should be within the physical capabilities of the RF amplification circuit, and thus, the RF amplification circuit is prevented from being damaged once the supply voltage is above the threshold voltage level.
Public/Granted literature
- US20150070098A1 RF AMPLIFICATION DEVICE WITH POWER PROTECTION DURING HIGH SUPPLY VOLTAGE CONDITIONS Public/Granted day:2015-03-12
Information query
IPC分类: