Invention Grant
- Patent Title: Controlling photo acid diffusion in lithography processes
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Application No.: US14472306Application Date: 2014-08-28
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Publication No.: US09798240B2Publication Date: 2017-10-24
- Inventor: Peng Xie , Ludovic Godet , Christopher Bencher
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/38 ; G03F7/004 ; G03F7/26

Abstract:
Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field, a magnetic field, and/or a standing wave during photolithography processes. The field and/or standing wave application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.
Public/Granted literature
- US20160011518A1 CONTROLLING PHOTO ACID DIFFUSION IN LITHOGRAPHY PROCESSES Public/Granted day:2016-01-14
Information query
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