- 专利标题: Millimetre wave integrated circuits with thin film transistors
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申请号: US13987832申请日: 2013-09-09
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公开(公告)号: US09799686B2公开(公告)日: 2017-10-24
- 发明人: Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Yi-Chi Shih
- 申请人: Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Yi-Chi Shih
- 主分类号: H01L27/13
- IPC分类号: H01L27/13 ; H01L21/84 ; H01L27/12 ; H01L29/423 ; H01L21/02 ; H01L21/4757 ; H01L21/4763 ; H01L49/02 ; H01L29/24 ; H01L29/66
摘要:
MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.
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