- 专利标题: Semiconductor device
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申请号: US15401311申请日: 2017-01-09
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公开(公告)号: US09804330B1公开(公告)日: 2017-10-31
- 发明人: Ryosuke Nagao , Yoshifumi Sasahata , Eitaro Ishimura
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Studebaker & Brackett PC
- 优先权: JP2016-127707 20160628
- 主分类号: H01S5/40
- IPC分类号: H01S5/40 ; G02B6/125 ; G02B6/293 ; G02B6/12 ; H01S5/0625
摘要:
According to the present invention, a semiconductor device includes a substrate comprising a front end face, a rear end face and side faces, a plurality of semiconductor lasers provided on the substrate, a forward optical multiplexer to multiplex forward output light of the plurality of semiconductor lasers and output the multiplexed light to the front end face, a backward optical multiplexer to multiplex backward output light of the plurality of semiconductor lasers and output the multiplexed light to the rear end face and a plurality of backward waveguides connected to an output section of the backward optical multiplexer, wherein the plurality of backward waveguides includes a main waveguide disposed at a center of the output section and a plurality of lateral waveguides disposed on both sides of the main waveguide to bend toward the side faces and output light from the side faces diagonally to the side faces.