- 专利标题: Integrated Circuit Devices Having Clock Gating Circuits Therein
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申请号: US15212406申请日: 2016-07-18
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公开(公告)号: US09806695B2公开(公告)日: 2017-10-31
- 发明人: Byung-jo Kim
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel, P.A.
- 优先权: KR10-2015-0132600 20150918
- 主分类号: G06F1/04
- IPC分类号: G06F1/04 ; H03K3/012 ; H03K5/15
摘要:
An integrated circuit device includes a clock gating circuit, which is configured to generate a first plurality of clocks in response to a first reference clock at a first frequency and a plurality of operation enable signals. A plurality of functional circuits are provided, which are responsive to respective ones of the first plurality of clocks. The plurality of functional circuits is configured to generate respective ones of the plurality of operation enable signals, with each of the plurality of operation enable signals having a first logic state that enables a respective clock within said clock gating circuit and a second logic state that disables the respective clock within said clock gating circuit.
公开/授权文献
- US20170085254A1 SEMICONDUCTOR DEVICE 公开/授权日:2017-03-23
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