Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14854055Application Date: 2015-09-15
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Publication No.: US09807881B2Publication Date: 2017-10-31
- Inventor: Young-Jin Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2011-0077822 20110804
- Main IPC: H05K1/18
- IPC: H05K1/18 ; H01L23/48 ; H01L23/498 ; G09G3/3225 ; G09G3/36 ; H01L23/52 ; H01L23/50 ; H01L23/00 ; H01L23/15

Abstract:
A semiconductor device includes a semiconductor chip which includes a first circuit and a second circuit that are spaced apart from each other, without internal wirings electrically connecting the first circuit and the second circuit to each other, a substrate on which the semiconductor chip is disposed, and substrate wirings that are arranged on the substrate and electrically connect the first circuit and the second circuit to each other.
Public/Granted literature
- US20160007465A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-01-07
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