发明授权
- 专利标题： Etching method
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申请号： US14933259申请日： 2015-11-05
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公开(公告)号： US09812292B2公开(公告)日： 2017-11-07
- 发明人: Hidekazu Iida
- 申请人： DISCO CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： Disco Corporation
- 当前专利权人： Disco Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Greer Burns & Crain, Ltd.
- 优先权： JP2014-228755 20141111
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01L21/311 ; H01L21/67 ; H01J37/32 ; H01L21/683 ; H01L21/306 ; H01L21/02
摘要：
Disclosed herein is an etching method for a workpiece. The etching method includes the steps of dissociating an inert gas to form a plasma in an evacuated condition of a chamber to thereby remove moisture present on the workpiece set in the chamber, and next dissociating a fluorine-based stable gas instead of the inert gas to form a plasma in the chamber after removing the moisture to thereby dry-etch the workpiece.
公开/授权文献
- US20160260624A1 ETCHING METHOD 公开/授权日：2016-09-08
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