According to an embodiment, a semiconductor memory device comprises: a memory string comprising a plurality of memory cells connected in series therein; and a contact electrically connected to one end of the memory string. The memory string comprises a plurality of control gate electrodes, and a semiconductor layer. The contact comprises a contact layer, the contact layer having a plate-like shape whose longer direction is a first direction parallel to the substrate, and the contact layer having its lower surface electrically connected to the one end of the semiconductor layer. Moreover, the contact layer includes a metal layer, a silicon based layer, and a second conductive layer. The metal layer includes tungsten. The silicon based layer includes a material including silicon. The second conductive layer covers side surfaces of the metal layer and the silicon based layer.