- 专利标题: Semiconductor device, inverter circuit, and drive device
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申请号: US15235404申请日: 2016-08-12
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公开(公告)号: US09812411B2公开(公告)日: 2017-11-07
- 发明人: Kentaro Ikeda , Kazuto Takao , Ryosuke Iijima
- 申请人: Kabushiki Kaisha Toshiba
- 申请人地址: JP Minato-ku
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Minato-ku
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2015-179373 20150911
- 主分类号: H01L23/64
- IPC分类号: H01L23/64 ; H01L29/16 ; H01L29/78 ; H01L49/02 ; H01L23/373 ; H01L23/58 ; H01L23/427 ; H01L23/62 ; H02M7/00
摘要:
A semiconductor device of an embodiment includes a first electrode, a second electrode facing the first electrode, an alternating-current electrode, a first switching element provided between the first electrode and the alternating-current electrode, and a second switching element provided between the second electrode and the alternating-current electrode. The first switching element and the second switching element are electrically connected in series between the first electrode and the second electrode, and the alternating-current electrode is electrically connected between the first switching element and the second switching element.
公开/授权文献
- US20170077048A1 SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, AND DRIVE DEVICE 公开/授权日:2017-03-16
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