- 专利标题: Protected active metal electrode and device with the electrode
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申请号: US14140471申请日: 2013-12-25
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公开(公告)号: US09812706B2公开(公告)日: 2017-11-07
- 发明人: Jin-Bao Wu , Li-Duan Tsai , Jia-Jen Chang , Ming-Sheng Leu , Jenn-Yeu Hwang , Chun-Lung Li
- 申请人: Industrial Technology Research Institute
- 申请人地址: TW Hsinchu
- 专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人地址: TW Hsinchu
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: TW101151089A 20121228
- 主分类号: H01M4/36
- IPC分类号: H01M4/36 ; H01M4/13 ; H01M4/38 ; H01M4/48 ; H01M4/58 ; H01M4/62 ; H01M10/0525 ; B82Y30/00 ; H01M4/02
摘要:
A protected active metal electrode and a device with the electrode are provided. The protected active metal electrode includes an active metal substrate and a protection layer on a surface of the active metal substrate. The protection layer at least includes a metal thin film covering the surface of the active metal substrate and an electrically-conductive thin film covering a surface of the metal thin film. A material of the metal thin film is Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, or W. A material of the electrically-conductive thin film is selected from nitride of a metal in the metal thin film, carbide of a metal in the metal thin film, a diamond-like carbon (DLC), and a combination thereof.
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