- 专利标题: Device and method for inspecting semiconductor materials
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申请号: US14350135申请日: 2012-10-04
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公开(公告)号: US09816942B2公开(公告)日: 2017-11-14
- 发明人: Philippe Gastaldo , Viviane Leguy
- 申请人: Altatech Semiconductor
- 申请人地址: FR Montbonnot-Saint-Martin
- 专利权人: ALTATECH SEMICONDUCTOR
- 当前专利权人: ALTATECH SEMICONDUCTOR
- 当前专利权人地址: FR Montbonnot-Saint-Martin
- 代理机构: TraskBritt
- 优先权: FR1103073 20111007
- 国际申请: PCT/FR2012/000395 WO 20121004
- 国际公布: WO2013/050673 WO 20130411
- 主分类号: G06F15/00
- IPC分类号: G06F15/00 ; G01N21/95 ; H01L21/66 ; G06F11/30
摘要:
A nanotopographic measuring device comprises an input arranged to receive sets of measurement data relating to a semiconductor wafer and memory organized into first and second working tables and a results table. A calculation function is capable of establishing a current surface equation from localized gradient values. The equation is established in such a way as to generally minimize a deviation amount between the gradient values calculated from the current surface equation and the localized gradient values. A reconstruction function calculates localized gradient values from a set of measurement data corresponding to an area of the wafer and completes the working tables with these values. It repeatedly calls the calculation function, each time with a part of the values of the first working table and the second working table corresponding to a portion of the area of the wafer to determine, each time, a current surface equation. It completes the results table with the localized height data corresponding to this area, in relation to the reference plane of the wafer, the localized height data being calculated from at least certain of the current surface equations.
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