- 专利标题: Dual material repeller
-
申请号: US15007853申请日: 2016-01-27
-
公开(公告)号: US09824846B2公开(公告)日: 2017-11-21
- 发明人: William Davis Lee , Alexander S. Perel , David P. Sporleder
- 申请人: Varian Semiconductor Equipment Associates, Inc.
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 代理机构: Nields, Lemack & Frame, LLC
- 主分类号: H01J27/02
- IPC分类号: H01J27/02 ; H01J27/20
摘要:
The IHC ion source comprises an ion source chamber having a cathode and a repeller on opposite ends. The repeller is made of two discrete parts, each comprising a different material. The repeller includes a repeller head, which may be a disc shaped component, and a stem to support the head. The repeller head is made from a conductive material having a higher thermal conductivity than the stem. In this way, the temperature of the repeller head is maintained at a higher temperature than would otherwise be possible. The higher temperature limits the build-up of material on the repeller head, which improves the performance of the IHC ion source. In certain embodiments, the repeller head and the stem are connected using a press fit. Differences in the coefficient of thermal expansion of the repeller head and the stem may cause the press fit to become tighter at higher temperatures.
公开/授权文献
- US20170213684A1 Dual Material Repeller 公开/授权日:2017-07-27
信息查询