Invention Grant
- Patent Title: Semiconductor device allowing metal layer routing formed directly under metal pad
-
Application No.: US15356680Application Date: 2016-11-21
-
Publication No.: US09824971B2Publication Date: 2017-11-21
- Inventor: Chun-Liang Chen
- Applicant: MEDIATEK INC.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/528 ; H01L27/088 ; H01L23/485 ; H01L23/522 ; H01L23/00
Abstract:
A semiconductor device may include a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device and is directly contacting the first metal layer. The first specific metal layer routing is formed on a second metal layer of the semiconductor device and under the metal pad. In addition, the semiconductor device may include at least one via plug for connecting the first specific metal layer routing to at least one metal region in the first metal layer, where the aforementioned at least one via plug is formed directly under the metal pad.
Public/Granted literature
- US20170069574A1 SEMICONDUCTOR DEVICE ALLOWING METAL LAYER ROUTING FORMED DIRECTLY UNDER METAL PAD Public/Granted day:2017-03-09
Information query
IPC分类:
