- 专利标题： Bidirectional Zener diode
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申请号： US15041019申请日： 2016-02-10
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公开(公告)号： US09825187B2公开(公告)日： 2017-11-21
- 发明人: Hiroki Yamamoto
- 申请人： ROHM CO., LTD.
- 申请人地址： JP Kyoto
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JP2014-43187 20140305; JP2014-43188 20140305; JP2014-43189 20140305; JP2014-43190 20140305; JP2014-43191 20140305; JP2014-225236 20141105
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/866 ; H01L29/417 ; H01L27/02 ; H01L29/747 ; H01L29/66 ; H01L29/06
摘要：
A bidirectional Zener diode of the present invention includes a semiconductor substrate of a first conductivity type, a first electrode and a second electrode which are defined on the semiconductor substrate, and a plurality of diffusion regions of a second conductivity type, which are defined at intervals from one another on a surface portion of the semiconductor substrate, to define p-n junctions with the semiconductor substrate, and the plurality of diffusion regions include diode regions which are electrically connected to the first electrode and the second electrode, and pseudo-diode regions which are electrically isolated from the first electrode and the second electrode.
公开/授权文献
- US20160163883A1 BIDIRECTIONAL ZENER DIODE 公开/授权日：2016-06-09
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