Invention Grant
- Patent Title: Thin film transistor array panel having an oxide semiconductor including silicon
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Application No.: US14463581Application Date: 2014-08-19
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Publication No.: US09828666B2Publication Date: 2017-11-28
- Inventor: Hyoung-Rae Lee , Moon Ju Kim , Eun Suk Kim , Seok-Kun Yoon , Kwang Youl Lee , Jong-Won Choo
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2014-0034915 20140325
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; H01L29/786 ; H01L27/12 ; C23C14/08 ; C23C14/35 ; C23C14/56

Abstract:
An exemplary embodiment provides a thin film transistor array panel, including: a substrate; an oxide semiconductor layer disposed on the substrate; an insulating layer disposed on the oxide semiconductor layer; and a pixel electrode disposed on the insulating layer. The oxide semiconductor layer includes a first layer and a second layer disposed on the first layer, the second layer includes an oxide semiconductor including silicon, and the second layer contacts the insulating layer.
Public/Granted literature
- US20150279673A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-10-01
Information query
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