Thin film transistor array panel having an oxide semiconductor including silicon
Abstract:
An exemplary embodiment provides a thin film transistor array panel, including: a substrate; an oxide semiconductor layer disposed on the substrate; an insulating layer disposed on the oxide semiconductor layer; and a pixel electrode disposed on the insulating layer. The oxide semiconductor layer includes a first layer and a second layer disposed on the first layer, the second layer includes an oxide semiconductor including silicon, and the second layer contacts the insulating layer.
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