- 专利标题： Semiconductor device, power supply control method of semiconductor device, and sensor node
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申请号： US14389311申请日： 2013-03-28
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公开(公告)号： US09837816B2公开(公告)日： 2017-12-05
- 发明人: Makoto Miyamura , Noboru Sakimura , Ryusuke Nebashi , Yukihide Tsuji , Tadahiko Sugibayashi
- 申请人： NEC CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： NEC CORPORATION
- 当前专利权人： NEC CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Young & Thompson
- 优先权： JP2012-077960 20120329
- 国际申请： PCT/JP2013/059354 WO 20130328
- 国际公布： WO2013/147070 WO 20131003
- 主分类号： H02J1/08
- IPC分类号： H02J1/08 ; H02J1/10
摘要：
A semiconductor device includes a current control unit whose conductance is variable and a control unit configured to control the conductance of the current control unit. The current control unit is connected to a direct current power source in parallel with a load for the direct current power source, through a capacitor. The control unit sets the current control unit to a first conductance when the direct current power source and the load are not in a conduction state, and sets the current control unit to a second conductance larger than the first conductance when the direct current power source and the load are in the conduction state.
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