- 专利标题: Method of manufacturing transparent conductor, transparent conductor and device for manufacturing the same, and device for manufacturing transparent conductor precursor
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申请号: US14657571申请日: 2015-03-13
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公开(公告)号: US09847150B2公开(公告)日: 2017-12-19
- 发明人: Katsuyuki Naito , Yoshihiro Akasaka , Tianyi Yang , Norihiro Yoshinaga
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2014-051797 20140314
- 主分类号: H01B1/02
- IPC分类号: H01B1/02 ; H01B1/24 ; B82Y30/00 ; H01B1/22 ; H01B1/20 ; C23F1/18 ; B82Y10/00 ; B82Y40/00 ; G06F3/041 ; H01B1/04 ; H01L51/44 ; H01L31/0224 ; H01L51/52 ; H01L29/16 ; H01L29/41 ; C23F1/00 ; C23F1/08 ; H01L51/00 ; H01L31/028
摘要:
According to one embodiment, a method of manufacturing a transparent conductor is provided. In the method, a silver nanowire layer including a plurality of silver nanowires and having openings is formed on a graphene film supported by a copper support. Then, a transparent resin layer insoluble in a copper-etching solution is formed on the silver nanowire layer such that the transparent resin layer contacts the graphene film through the openings. The copper support is then brought into contact with the non-acidic copper-etching solution to remove the copper support, thereby exposing the graphene film.
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