- 专利标题： Semiconductor memory device and method for manufacturing same
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申请号： US15268126申请日： 2016-09-16
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公开(公告)号： US09847342B2公开(公告)日： 2017-12-19
- 发明人: Satoshi Nagashima , Katsumi Yamamoto , Kohei Sakaike , Tatsuya Kato , Keisuke Kikutani , Fumitaka Arai , Atsushi Murakoshi , Shunichi Takeuchi , Katsuyuki Sekine
- 申请人： Toshiba Memory Corporation
- 申请人地址： JP Minato-ku
- 专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L27/11556 ; H01L29/51 ; H01L27/11521 ; H01L29/06 ; H01L21/31 ; H01L21/306
摘要：
A semiconductor memory device includes a first structural body, a second structural body and interconnections. The first and the second structural bodies are separated in a first direction and extend in a second direction. The interconnections are provided between the first structural body and the second structural body, extend in the second direction, and are separated from each other along a third direction. The first and the second structural bodies each includes an insulating member, a column-shaped body and an insulating film. The insulating member and the column-shaped body are disposed in an alternating manner along the second direction and extend in the third direction. The insulating members of the first and second structural bodies make contact with the interconnections.
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