- 专利标题： Memory device and operating method of memory device
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申请号： US12358278申请日： 2009-01-23
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公开(公告)号： US09852061B2公开(公告)日： 2017-12-26
- 发明人: Jae Don Lee , Choong Hun Lee , Gyu Sang Choi , Min Young Son
- 申请人： Jae Don Lee , Choong Hun Lee , Gyu Sang Choi , Min Young Son
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 代理机构： NSIP Law
- 优先权： KR10-2008-0097061 20081002
- 主分类号： G06F12/02
- IPC分类号： G06F12/02
摘要：
A memory device may include a non-volatile memory and non-volatile RAM. The non-volatile memory may include a data block and a metadata block. Metadata information with respect to the data block may be included in the metadata block. A portion of metadata with respect to the data block or the metadata with respect to the metadata block may be stored in the non-volatile RAM.
公开/授权文献
- US20100088467A1 MEMORY DEVICE AND OPERATING METHOD OF MEMORY DEVICE 公开/授权日：2010-04-08
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