A semiconductor memory device includes a normal memory block including a plurality of normal memory cells, a redundant memory block including a plurality of redundant memory cells used to replace defective cells among the normal memory cells, a normal buffer block configured to sense and amplify data stored in the normal memory block, a redundant buffer block configured to sense and amplify data stored in the redundant memory block, a normal latch block configured to fetch data from the normal buffer block and store the data based on a normal control signal, and a redundant latch block configured to selectively fetch data from the redundant buffer block and store the data based on a redundant control signal.