发明授权
- 专利标题: Semiconductor packages having through electrodes and methods of fabricating the same
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申请号: US15010438申请日: 2016-01-29
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公开(公告)号: US09853012B2公开(公告)日: 2017-12-26
- 发明人: Hyunsoo Chung , Jongyeon Kim , In-Young Lee , Tae-Je Cho
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-Si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-Si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2013-0074572 20130627
- 主分类号: H01L23/02
- IPC分类号: H01L23/02 ; H01L25/065 ; H01L21/48 ; H01L25/00 ; H01L21/02 ; H01L23/31 ; H01L21/56 ; H01L23/00 ; H01L25/03 ; H01L21/768
摘要:
Provided are semiconductor packages having through electrodes and methods of fabricating the same. The method may include may include forming a wafer-level package including first semiconductor chips stacked on a second semiconductor chip, forming a chip-level package including fourth semiconductor chips stacked on a third semiconductor chip stacking a plurality of the chip-level packages on a back surface of the second semiconductor substrate of the wafer-level package, polishing the first mold layer of the wafer-level package and the first semiconductor chips to expose a first through electrodes of the first semiconductor chip, and forming outer electrodes on the polished first semiconductor chips to be connected to the first through electrodes, respectively.
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