Invention Grant
- Patent Title: Selective emitter solar cell
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Application No.: US14788057Application Date: 2015-06-30
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Publication No.: US09853178B2Publication Date: 2017-12-26
- Inventor: Jungmin Ha , Junyong Ahn , Jinho Kim
- Applicant: LG ELECTRONICS INC.
- Applicant Address: KR Seoul
- Assignee: LG ELECTRONICS INC.
- Current Assignee: LG ELECTRONICS INC.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2010-0030250 20100402
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0224 ; H01L31/068

Abstract:
A manufacturing method of selective emitter solar cell can include, forming an emitter layer positioned on a light receiving surface of the substrate having a first conductive type, the emitter layer having a second conductive type opposite to the first conductive type, forming a first emitter portion having a first impurity concentration and a second emitter portion having a second impurity concentration higher than the first impurity concentration on the emitter layer using a etch stop mask or a mask pattern, and forming a plurality of first electrodes connected to the second emitter portion, wherein the second emitter portion includes a first region that contacts the first electrodes and overlaps the first electrodes and a second region that is positioned around the first region and does not overlap the first electrodes, and the line width of the second region is more than the line width of each first electrode and less than four times the line width of each first electrode.
Public/Granted literature
- US20150303348A1 SELECTIVE EMITTER SOLAR CELL Public/Granted day:2015-10-22
Information query
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