Invention Grant
- Patent Title: Ion source
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Application No.: US13781913Application Date: 2013-03-01
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Publication No.: US09859086B2Publication Date: 2018-01-02
- Inventor: Akiko Kakutani , Kiyoshi Hashimoto , Kiyokazu Sato , Akihiro Osanai , Takeshi Yoshiyuki , Tsutomu Kurusu
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-046416 20120302
- Main IPC: H01J27/24
- IPC: H01J27/24 ; H01J27/02 ; A61N5/10 ; H01J37/08

Abstract:
According to one embodiment, there is provided an ion source. The ion source includes a vacuum-exhausted vacuum chamber, a target which is set in the vacuum chamber and generates a plurality of valences of ions by irradiation of a laser beam, an acceleration electrode which is applied with voltage in order to accelerate the ions generated by the target, and an intermediate electrode which is provided between the target and the acceleration electrode and is applied with reverse voltage of the voltage applied to the acceleration electrode.
Public/Granted literature
- US20130228699A1 ION SOURCE Public/Granted day:2013-09-05
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