Invention Grant
- Patent Title: Self-organization material and pattern formation method
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Application No.: US15255517Application Date: 2016-09-02
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Publication No.: US09859119B2Publication Date: 2018-01-02
- Inventor: Takeshi Okino , Akira Watanabe , Naoko Kihara , Ryosuke Yamamoto
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2015-173153 20150902
- Main IPC: H01L21/027
- IPC: H01L21/027 ; G03F7/00 ; C09K13/00 ; B81C1/00 ; G11B5/84 ; G11B7/26
Abstract:
A pattern formation method according to an embodiment includes providing a substrate in which protrusions each having a tapered shape are provided on a main surface. The method further includes supplying the main surface with spherical particles equal in diameter to make the spherical particles arrange in a triangular lattice form such that each of the protrusions is at least partially positioned within a region surrounded by the main surface and three of the spherical particles adjacent to one another.
Public/Granted literature
- US20170062206A1 SELF-ORGANIZATION MATERIAL AND PATTERN FORMATION METHOD Public/Granted day:2017-03-02
Information query
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