- 专利标题： Substrate heat treatment apparatus and heat treatment method
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申请号： US14291555申请日： 2014-05-30
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公开(公告)号： US09859137B2公开(公告)日： 2018-01-02
- 发明人: Chun-Cha Kuo , Wen-Long Lee , Tzu-Chien Cheng , Ding-I Liu
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： McClure, Qualey & Rodack, LLP
- 主分类号： H01L21/67
- IPC分类号： H01L21/67 ; H01L29/66 ; H01L21/02 ; H01L21/28 ; H01L21/3213 ; H01L29/49 ; H01L29/51 ; H01L21/8238
摘要：
A method for forming a semiconductor device structure and an apparatus for heating a semiconductor substrate are provided. The method includes spin coating a material layer over a semiconductor substrate. The method also includes heating the material layer by using a first heater above the semiconductor substrate and a second heater below the semiconductor substrate.
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