Invention Grant
- Patent Title: Bridging local semiconductor interconnects
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Application No.: US15274403Application Date: 2016-09-23
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Publication No.: US09859303B2Publication Date: 2018-01-02
- Inventor: Wai-Kin Li , Chieh-Yu Lin , Yannick Daurelle
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , STMICROELECTRONICS, INC.
- Applicant Address: US NY Armonk US TX Coppell
- Assignee: International Business Machines Corporation,STMicroelectronics, Inc.
- Current Assignee: International Business Machines Corporation,STMicroelectronics, Inc.
- Current Assignee Address: US NY Armonk US TX Coppell
- Agent Matthew C. Zehrer
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/40 ; H01L21/441 ; H01L21/762 ; H01L21/8234 ; H01L27/088 ; H01L21/768 ; H01L21/84 ; H01L23/528 ; H01L27/02 ; H01L29/06 ; H01L29/08

Abstract:
A semiconductor device includes a plurality of gates formed upon a semiconductor substrate that includes a plurality of outer active areas (e.g. CMOS/PMOS areas, source/drain regions, etc.) and one or more inner active areas. An isolator is formed upon one or more inner gates associated with the one or more inner active areas. A contact bar electrically connects the outer active areas and/or outer gates and is formed upon the isolator. The isolator electrically insulates the contact bar from the one or more inner active areas and/or the one or more inner gates.
Public/Granted literature
- US20170012061A1 BRIDGING LOCAL SEMICONDUCTOR INTERCONNECTS Public/Granted day:2017-01-12
Information query
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