A method for forming a plurality of semiconductor devices on a plurality of semiconductor wafers includes forming an electrically conductive layer on a surface of a first semiconductor wafer so that a Schottky-contact is generated between the electrically conductive layer formed on the first semiconductor wafer and the first semiconductor wafer. The method further includes forming an electrically conductive layer on a surface of a second semiconductor wafer so that a Schottky-contact is generated between the electrically conductive layer formed on the second semiconductor wafer and the second semiconductor wafer. A material composition of the electrically conductive layers formed on the first and second semiconductor wafers are selected based on a value of the physical property of the first and second semiconductor wafers, respectively. The material composition of the electrically conductive layers formed on the first and second semiconductor wafers are different.