- 专利标题: Node isolation for protection from electrostatic discharge (ESD) damage
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申请号: US15417656申请日: 2017-01-27
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公开(公告)号: US09859704B2公开(公告)日: 2018-01-02
- 发明人: Chen Guo , Yutaka Nakamura , Jun Sawada
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Sherman IP LLP
- 代理商 Kenneth L. Sherman; Steven Laut
- 主分类号: H02H9/04
- IPC分类号: H02H9/04 ; H01L27/02
摘要:
An embodiment includes a tie-off circuit includes multiple field effect transistors (FETs), and a node isolation circuit that is connected to a first output node and a second output node of the tie-off circuit. The node isolation circuit consists of a first FET with a third output node and a second FET with a fourth output node. The second output node includes a logical LO node and is coupled to a gate of the first FET and generates a TIE HI output.
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