Node isolation for protection from electrostatic discharge (ESD) damage
摘要:
An embodiment includes a tie-off circuit includes multiple field effect transistors (FETs), and a node isolation circuit that is connected to a first output node and a second output node of the tie-off circuit. The node isolation circuit consists of a first FET with a third output node and a second FET with a fourth output node. The second output node includes a logical LO node and is coupled to a gate of the first FET and generates a TIE HI output.
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