Invention Grant
- Patent Title: Bi-directional current sensing circuit
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Application No.: US14871636Application Date: 2015-09-30
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Publication No.: US09863982B2Publication Date: 2018-01-09
- Inventor: Ranjit Kumar Guntreddi , Zengjing Wu , Zhaohui Zhu , Gianluca Valentino
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: G01R19/00
- IPC: G01R19/00 ; G05F1/10 ; H02M3/156 ; H02M1/00

Abstract:
The embodiments described herein relate to an improved circuit technique for sensing current conducting in a power transistor coupled with an input power supply. The circuit includes a bi-directional current sensing circuit using current sensing transistor gate control. The circuit includes a forward current sensing transistor to sense current conducting in the power transistor during forward mode current of the circuit and a reverse boost current sensing transistor to sense current conducting during reverse current mode of the circuit. A level shifter is also provided with complementary outputs to either turn on the forward current sensing transistor or turn off the reverse boost current sensing transistor when the circuit is in forward current mode, or to turn off the forward current sensing transistor and turn on the reverse boost current sensing transistor when the circuit is in reverse current mode.
Public/Granted literature
- US20170089958A1 BI-DIRECTIONAL CURRENT SENSING CIRCUIT Public/Granted day:2017-03-30
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