The present disclosure relates to a semiconductor integrated circuit. The semiconductor integrated circuit includes a substrate, a first transistor and a first patterned conductive layer. The first transistor has a source region, a drain region in the substrate and a gate region on the substrate. The first patterned conductive layer is electrically connected to the drain region of the first transistor. The first patterned conductive layer includes a first section, a second section and a fusible device.