- 专利标题： Transistor structure having N-type and P-type elongated regions intersecting under common gate
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申请号： US14662734申请日： 2015-03-19
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公开(公告)号： US09865603B2公开(公告)日： 2018-01-09
- 发明人: Hui Zang , Min-hwa Chi
- 申请人： GLOBALFOUNDRIES Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Heslin Rothenberg Farley & Mesiti P.C.
- 代理商 Wayne F. Reinke, Esq.
- 主分类号： H01L27/11
- IPC分类号： H01L27/11 ; H01L21/82 ; H01L27/092 ; H01L21/8238
摘要：
A semiconductor structure includes a semiconductor substrate, at least one first elongated region of n-type or p-type, and at least one other second elongated region of the other of n-type or p-type, the first and second elongated regions crossing such that the first elongated region and the second elongated region intersect at a common area, and a shared gate structure over each common area.
公开/授权文献
- US20160276350A1 MERGED N/P TYPE TRANSISTOR 公开/授权日：2016-09-22
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