A semiconductor device includes a first semiconductor substrate having a first wiring layer which includes a first conductive pad, a second semiconductor substrate disposed on the first semiconductor substrate and including a second wiring layer which includes a second conductive pad, a first oxide layer disposed on the second semiconductor substrate and containing a second end of an intermediate connection which extends vertically through the second semiconductor substrate and has a first end electrically connected to the second conductive pad, and a third semiconductor substrate disposed on the first oxide layer and including a third wiring layer which includes a third conductive pad. The second end of the intermediate connection layer is electrically connected to the third conductive pad via a metal bond.