Invention Grant
- Patent Title: Methods of forming conductive elements of semiconductor devices and of forming memory cells
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Application No.: US15375457Application Date: 2016-12-12
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Publication No.: US09865812B2Publication Date: 2018-01-09
- Inventor: Sanh D. Tang , Scott E. Sills , Whitney L. West , Rob B. Goodwin , Nishant Sinha
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L45/00 ; H01L23/532

Abstract:
Methods of forming conductive elements, such as interconnects and electrodes, for semiconductor structures and memory cells. The methods include forming a first conductive material and a second conductive material comprising silver in a portion of at least one opening and performing a polishing process to fill the at least one opening with at least one of the first and second conductive materials. An annealing process may be performed to form a mixture or an alloy of the silver and the first conductive material. The methods enable formation of silver-containing conductive elements having reduced dimensions (e.g., less than about 20 nm). The resulting conductive elements have a desirable resistivity. The methods may be used, for example, to form interconnects for electrically connecting active devices and to form electrodes for memory cells. A semiconductor structure and a memory cell including such a conductive structure are also disclosed.
Public/Granted literature
- US20170092855A1 METHODS OF FORMING CONDUCTIVE ELEMENTS OF SEMICONDUCTOR DEVICES AND OF FORMING MEMORY CELLS Public/Granted day:2017-03-30
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