Invention Grant
- Patent Title: Low temperature fabrication of lateral thin film varistor
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Application No.: US15149652Application Date: 2016-05-09
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Publication No.: US09870851B2Publication Date: 2018-01-16
- Inventor: Jeffrey P. Gambino , Richard S. Graf , Sudeep Mandal
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Tihon Poltavets, Esq.
- Main IPC: H01C17/065
- IPC: H01C17/065 ; H01C17/28 ; H01C17/245 ; H01C7/10 ; H01C7/112 ; H01C7/12 ; H01C7/00 ; H01L27/02 ; H01L49/02 ; H01L29/06 ; H01L21/762 ; H01C17/00 ; H01L23/522 ; H01L23/528 ; H01L21/02 ; H01L23/62 ; H01L23/64 ; H01C17/12
Abstract:
A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.
Public/Granted literature
- US20160254344A1 LOW TEMPERATURE FABRICATION OF LATERAL THIN FILM VARISTOR Public/Granted day:2016-09-01
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