Invention Grant
- Patent Title: Plasma protection diode for a HEMT device
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Application No.: US15357308Application Date: 2016-11-21
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Publication No.: US09871030B2Publication Date: 2018-01-16
- Inventor: King-Yuen Wong , Chun-Wei Hsu , Chen-Ju Yu , Fu-Wei Yao , Jiun-Lei Jerry Yu , Fu-Chih Yang , Po-Chih Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/66 ; H01L29/778 ; H01L29/10 ; H01L29/20 ; H01L21/8252 ; H01L27/06 ; H01L21/02 ; H01L21/265 ; H01L21/306 ; H01L21/768 ; H01L21/8258 ; H01L23/522 ; H01L29/205 ; H01L29/861
Abstract:
A silicon substrate having a III-V compound layer disposed thereon is provided. A diode is formed in the silicon substrate through an ion implantation process. The diode is formed proximate to an interface between the silicon substrate and the III-V compound layer. An opening is etched through the III-V compound layer to expose the diode. The opening is filled with a conductive material. Thereby, a via is formed that is coupled to the diode. A High Electron Mobility Transistor (HEMT) device is formed at least partially in the III-V compound layer.
Public/Granted literature
- US20170069617A1 PLASMA PROTECTION DIODE FOR A HEMT DEVICE Public/Granted day:2017-03-09
Information query
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