Invention Grant
- Patent Title: RGBZ pixel unit cell with first and second Z transfer gates
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Application No.: US14579965Application Date: 2014-12-22
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Publication No.: US09871065B2Publication Date: 2018-01-16
- Inventor: Chung Chun Wan , Boyd Fowler
- Applicant: Google Inc.
- Applicant Address: US CA Mountain View
- Assignee: Google Inc.
- Current Assignee: Google Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Fish & Richardson P.C.
- Main IPC: H04N5/33
- IPC: H04N5/33 ; H01L27/146 ; H04N5/3745 ; H04N9/04 ; H04N5/225

Abstract:
An image sensor is described having a pixel array. The pixel array has a unit cell that includes visible light photodiodes and an infra-red photodiode. The visible light photodiodes and the infra-red photodiode are coupled to a particular column of the pixel array. The unit cell has a first capacitor coupled to the visible light photodiodes to store charge from each of the visible-light photodiodes. The unit cell has a readout circuit to provide the first capacitor's voltage on the particular column. The unit cell has a second capacitor that is coupled to the infra-red photodiode through a first transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure. The first capacitor is coupled to the infra-red photodiode through a second transfer gate transistor to receive charge from the infra-red photodiode during the time-of-flight exposure.
Public/Granted literature
- US20160181298A1 RGBZ PIXEL UNIT CELL WITH FIRST AND SECOND Z TRANSFER GATES Public/Granted day:2016-06-23
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