Invention Grant
- Patent Title: Method of forming a single-crystal nanowire finFET
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Application No.: US14684443Application Date: 2015-04-13
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Publication No.: US09871102B2Publication Date: 2018-01-16
- Inventor: Hsin-Yu Chen , Huai-Tzu Chiang , Sheng-Hao Lin , Hao-Ming Lee
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201510111039 20150313
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/78 ; H01L29/786 ; H01L29/423 ; H01L21/02 ; H01L29/10
Abstract:
A semiconductor device and a method of forming the same, the semiconductor device includes a single crystal substrate, a source/drain structure and a nanowire structure. The source/drain structure is disposed on and contacts with the substrate. The nanowire structure is connected to the source/drain structure.
Public/Granted literature
- US20160268375A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2016-09-15
Information query
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