Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15086775Application Date: 2016-03-31
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Publication No.: US09871103B2Publication Date: 2018-01-16
- Inventor: Ho Jun Kim , Sung Dae Suk
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0107695 20150730
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/02 ; H01L27/118 ; H01L27/092 ; H01L23/528 ; H01L27/11 ; H01L27/088

Abstract:
A semiconductor device includes a plurality of active regions including channel regions extending in a first direction on a semiconductor substrate and source/drain regions connected to the channel regions, a plurality of gate electrodes extending in a second direction different from the first direction to intersect the channel regions, a plurality of conductive lines electrically connected to at least one of the source/drain regions and the plurality of gate electrodes through a plurality of vias, and a power line disposed between the semiconductor substrate and the plurality of conductive lines and configured to supply a power supply voltage.
Public/Granted literature
- US20170033102A1 Semiconductor Device Public/Granted day:2017-02-02
Information query
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