Invention Grant
- Patent Title: Methods of forming memory devices having electrodes comprising nanowires
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Application No.: US15383105Application Date: 2016-12-19
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Publication No.: US09871196B2Publication Date: 2018-01-16
- Inventor: Jun Liu , Michael P. Violette
- Applicant: Micron Technology, Inc.
- Applicant Address: US VA Alexandria
- Assignee: Ovonyx Memory Technology, LLC
- Current Assignee: Ovonyx Memory Technology, LLC
- Current Assignee Address: US VA Alexandria
- Agency: TraskBritt
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L21/02
Abstract:
Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such methods may comprise establishing contact between one end of a single nanowire and a volume of variable resistance material in a memory cell. Electronic systems include such memory devices.
Public/Granted literature
- US20170104156A1 METHODS OF FORMING MEMORY DEVICES HAVING ELECTRODES COMPRISING NANOWIRES Public/Granted day:2017-04-13
Information query
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