- Patent Title: Method for manufacturing a resistive random access memory device
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Application No.: US14825209Application Date: 2015-08-13
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Publication No.: US09871198B2Publication Date: 2018-01-16
- Inventor: Yu-Yu Lin , Feng-Min Lee
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A method for manufacturing a resistive memory device is disclosed and comprises following steps. Firstly, a bottom electrode is formed over a substrate. Next, an oxidation process is performed to the bottom electrode to form a metal oxide layer, wherein a hydrogen plasma and an oxygen plasma are provided during the oxidation process. Then, a top electrode is formed on the metal oxide layer.
Public/Granted literature
- US20170047514A1 METHOD FOR MANUFACTURING A RESISTIVE RANDOM ACCESS MEMORY DEVICE Public/Granted day:2017-02-16
Information query
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