Invention Grant
- Patent Title: Compensation for variations in a capacitive sense matrix
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Application No.: US14945620Application Date: 2015-11-19
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Publication No.: US09874986B2Publication Date: 2018-01-23
- Inventor: Yannick Guedon , Sze-Kwang Tan , Dianbo Guo
- Applicant: STMicroelectronics Asia Pacific Pte Ltd
- Applicant Address: SG Singapore
- Assignee: STMicroelectronics Asia Pacific Pte Ltd
- Current Assignee: STMicroelectronics Asia Pacific Pte Ltd
- Current Assignee Address: SG Singapore
- Agency: Gardere Wynne Sewell LLP
- Main IPC: G06F3/044
- IPC: G06F3/044 ; G06F3/041

Abstract:
A readout device for a capacitive sense matrix includes a computer readable storage medium configured to store capacitance data. The capacitance data represents capacitance values of the capacitive sense matrix. The readout device also includes a readout circuit configured to receive a signal from the capacitive sense matrix, the readout circuit being configured based upon the capacitance data. Also described are a readout method and a method of compensating for variations in capacitance.
Public/Granted literature
- US20160077634A1 COMPENSATION FOR VARIATIONS IN A CAPACITIVE SENSE MATRIX Public/Granted day:2016-03-17
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