Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US15335190Application Date: 2016-10-26
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Publication No.: US09875897B2Publication Date: 2018-01-23
- Inventor: Jae-Hwang Sim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2015-0181851 20151218
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L23/522 ; H01L27/11524 ; H01L27/11529 ; H01L27/11531 ; H01L27/1157 ; H01L27/11573 ; H01L29/06

Abstract:
A semiconductor device includes line patterns extending in a first direction, and separated from each other in a second direction perpendicular to the first direction. The plurality of line patterns includes at least two line sets, and each of the line sets includes four line patterns consecutively disposed in the second direction and having a length which varies based on location, and the at least two line sets have substantially an identical length.
Public/Granted literature
- US20170178907A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2017-06-22
Information query
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