Invention Grant
- Patent Title: Semiconductor device having conductive vias
-
Application No.: US15297452Application Date: 2016-10-19
-
Publication No.: US09875981B2Publication Date: 2018-01-23
- Inventor: Meng-Tsung Lee , Yi-Che Lai , Shih-Kuang Chiu
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW102107996A 20130307
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/48 ; H01L23/498 ; H01L23/31

Abstract:
A semiconductor device is provided, including: a substrate having opposing first and second surfaces and a plurality of conductive vias passing through the first and second surfaces; an insulating layer formed on the first surface of the substrate and exposing end portions of the conductive vias therefrom; and a buffer layer formed on the insulating layer at peripheries of the end portions of the conductive vias, thereby increasing product reliability and good yield.
Public/Granted literature
- US20170040277A1 SEMICONDUCTOR DEVICE HAVING CONDUCTIVE VIAS Public/Granted day:2017-02-09
Information query
IPC分类: