Invention Grant
- Patent Title: Method and apparatus for reducing in-process and in-use stiction for MEMS devices
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Application No.: US14873243Application Date: 2015-10-02
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Publication No.: US09878899B2Publication Date: 2018-01-30
- Inventor: Lee-Chuan Tseng , Chang-Ming Wu , Shih-Chang Liu , Yuan-Chih Hsieh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B81B3/00

Abstract:
The present disclosure involves forming a method of fabricating a Micro-Electro-Mechanical System (MEMS) device. A plurality of openings is formed in a first side of a first substrate. A dielectric layer is formed over the first side of the substrate. A plurality of segments of the dielectric layer fills the openings. The first side of the first substrate is bonded to a second substrate that contains a cavity. The bonding is performed such that the segments of the dielectric layer are disposed over the cavity. A portion of the first substrate disposed over the cavity is transformed into a plurality of movable components of a MEMS device. The movable components are in physical contact with the dielectric the layer. Thereafter, a portion of the dielectric layer is removed without using liquid chemicals.
Public/Granted literature
- US20170096328A1 METHOD AND APPARATUS FOR REDUCING IN-PROCESS AND IN-USE STICTION FOR MEMS DEVICES Public/Granted day:2017-04-06
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