Invention Grant
- Patent Title: Method for fabricating semiconductor device including fin shaped structure
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Application No.: US15465606Application Date: 2017-03-22
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Publication No.: US09881831B2Publication Date: 2018-01-30
- Inventor: Chung-Yi Chiu , Shih-Fang Hong , Chao-Hung Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW104126243A 20150812
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/02 ; H01L29/06 ; H01L29/78 ; H01L29/66 ; H01L29/161
Abstract:
A semiconductor device and a method of fabricating the same, the semiconductor device includes a silicon substrate, a fin shaped structure and a shallow trench isolation. The fin shaped structure is disposed on the silicon substrate and includes a silicon germanium (SiGe) layer extending from bottom to top in the fin shaped structure. The shallow trench isolation covers a bottom portion of the fin shaped structure.
Public/Granted literature
- US20170194193A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE INCLUDING FIN SHAPED STRUCTURE Public/Granted day:2017-07-06
Information query
IPC分类:
