Invention Grant
- Patent Title: Methods for fabricating integrated circuits with improved implantation processes
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Application No.: US15074483Application Date: 2016-03-18
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Publication No.: US09881841B2Publication Date: 2018-01-30
- Inventor: Alban Zaka , Ran Yan , El Mehdi Bazizi , Jan Hoentschel
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Lorenz & Kopf, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8238 ; H01L21/265 ; H01L21/266 ; H01L21/324 ; H01L29/66 ; H01L29/167 ; H01L21/268 ; H01L21/8234 ; H01L27/092 ; H01L29/10

Abstract:
Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a structure having an n-channel gate stack and a p-channel gate stack formed over a semiconductor substrate. The method includes forming halo implant regions in the semiconductor substrate adjacent the p-channel gate stack and forming extension implant regions in the semiconductor substrate adjacent the p-channel gate stack. The method further includes annealing the halo implant regions and the extension implant regions in the semiconductor substrate adjacent the p-channel gate stack. Also, the method forms extension implant regions in the semiconductor substrate adjacent the n-channel gate stack.
Public/Granted literature
- US20160204038A1 METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH IMPROVED IMPLANTATION PROCESSES Public/Granted day:2016-07-14
Information query
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