- 专利标题: Conductive connection structure having stress buffer layer
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申请号: US15409551申请日: 2017-01-19
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公开(公告)号: US09881867B1公开(公告)日: 2018-01-30
- 发明人: Po-Chun Lin
- 申请人: NANYA TECHNOLOGY CORPORATION
- 申请人地址: TW Taoyuan
- 专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址: TW Taoyuan
- 代理机构: CKC & Partners Co., Ltd.
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/522 ; H01L23/528
摘要:
A conductive connection structure includes a semiconductor substrate, a conductive pillar, and a stress buffer layer. The conductive pillar is in the semiconductor substrate. The stress buffer layer is between the semiconductor substrate and the conductive pillar. The conductive pillar has a protruding portion penetrating through the stress buffer layer.
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